Intel details 90-nanometre process

Intel details 90-nanometre process

Intel will begin making chips in volume on its 90-nanometre (.09 micron) manufacturing process next year.

Intel's current Pentium 4 processors are made using a .13 micron process. The size of the process refers to the width of the smallest wire on the chip. As the process width shrinks, more transistors can be placed on the chip.

In Intel's 90-nanometre process, the transistors themselves will only be 50 nanometres in length, which makes them the smallest complementary metal-oxide semiconductor (CMOS) transistors currently in production. Pentium 4s use 60-nanometre-long transistors. The transistors also feature minuscule gate oxides at 1.2 nanometres thick, or five atomic layers, the width of five silicon atoms. Short transistors and thin-gate oxides increase processor speed.

Strained silicon is also used in the new process technique. Strained silicon is a technique where a layer of silicon germanium is deposited on top of a silicon substrate. The atoms in the silicon substrate naturally seek to align themselves with the atoms in the germanium above, stretching the silicon. This allows electrons to flow more smoothly between the two substances, which increases processor speed without having to make any changes to the size of the transistors.

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